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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD837 DESCRIPTION *High DC Current Gain: hFE= 1000(Min.)@IC= 3A *High Switching Speed APPLICATIONS *Audio power amplifiers *General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Base Current-Peak Collector Power Dissipation @ TC=25 Junction Temperature 8 A PC 40 W TJ 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD837 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ; IB= 0 60 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 12mA B 2 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A; IB= 20mA B 4 V VBE(on) Base-Emitter On Voltage IC= 3A ; VCE= 3V 2.5 V ICBO Collector Cutoff Current VCB= 60V; IE= 0 0.2 mA ICEO Collector Cutoff Current VCE= 30V; IB= 0 B 0.5 mA A IEBO Emitter Cutoff Current VEB= 5V; IC=0 2 hFE-1 DC Current Gain IC= 0.5A ; VCE= 3V 1000 hFE-2 DC Current Gain IC= 3A ; VCE= 3V 1000 10000 Switching Times s ton Turn-On Time IC= 3A; IB1= -IB2= 12mA 0.3 toff Turn-Off Time 4 s isc Websitewww.iscsemi.cn 2 |
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